Everspin Technologies
Corporate brand
UnclaimedA semiconductor company focused on persistent magnetoresistive random-access memory and related storage technologies.
Last updated August 25, 2026
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Overview
Everspin Technologies is a United States semiconductor company headquartered in Chandler, Arizona, specializing in magnetoresistive random-access memory, commonly known as MRAM. Its products are designed to combine the speed and endurance associated with conventional RAM with the non-volatility of magnetic storage. Unlike volatile SRAM and DRAM, MRAM retains stored information when system power is removed, while also avoiding the finite write-cycle limitations associated with many forms of flash memory. These characteristics make the technology relevant to applications that require persistence, fast access, high endurance, and dependable operation across demanding environments. The company’s technology heritage traces back to MRAM research conducted inside Motorola and later associated with Freescale Semiconductor. Early work included the development of magnetic tunnel junction technologies and Toggle MRAM, followed by research into spin-transfer torque approaches that could support smaller cells, higher densities, and lower switching energy. Everspin emerged from this semiconductor development lineage as a dedicated MRAM business and progressively moved the technology from research and sampling toward commercial production. Everspin’s portfolio has included discrete Toggle MRAM, serial and parallel memory devices, higher-density Spin-Transfer Torque MRAM, embedded MRAM technology, and nvNITRO storage accelerators. Toggle MRAM products have been offered in densities ranging from kilobit-scale devices to multi-megabit products, with interfaces and packages intended for industrial, embedded, networking, transportation, and other specialized systems. STT-MRAM has extended the company’s reach into higher-density memory and interfaces compatible with standards such as DDR3 and DDR4, although MRAM implementations may require system-level adaptations because they operate as persistent memory rather than conventional volatile DRAM. A significant part of Everspin’s business model has involved collaboration with semiconductor foundries, especially GlobalFoundries. The companies worked on incorporating MRAM into CMOS manufacturing processes and on producing embedded memory at progressively smaller process nodes. Everspin has also maintained its own magnetic back-end-of-line wafer-processing capability, using standard CMOS wafers supplied through foundry relationships. This model allows the company to combine proprietary magnetic memory processing with established semiconductor manufacturing infrastructure. The company expanded commercially during the 2010s as it increased production volumes, introduced larger STT-MRAM capacities, and developed system products such as nvNITRO. In 2016 it completed an initial public offering, giving the business access to public capital markets. In 2017 it appointed Kevin Conley as president and chief executive officer, expanded support for FPGA-oriented memory controllers, and formally launched its first nvNITRO storage accelerator generation. Subsequent development focused on scaling STT-MRAM to 1Gb densities, broadening the design-in ecosystem, and advancing embedded MRAM manufacturing platforms. Everspin serves customers and design partners in markets where data persistence and reliability are more important than the lowest possible cost per bit. Potential applications include industrial equipment, networking infrastructure, automotive and transportation systems, aerospace and defense electronics, enterprise storage, instrumentation, and embedded systems. Its positioning is therefore more specialized than that of mass-market DRAM or NAND suppliers: the company competes by emphasizing non-volatility, endurance, fast writes, low standby data-loss risk, and operation in conditions where battery-backed or conventional memory architectures may be undesirable.
History
Everspin Technologies developed from the MRAM research lineage of Motorola and Freescale Semiconductor. The broader technological foundation was established by advances in magnetic materials and spin-based electronics. The giant magnetoresistance effect was identified in 1984, and spin-transfer torque was proposed in 1996, creating a route for magnetic tunnel junctions to be switched by spin-polarized electrical currents. Motorola began focused MRAM research during the late 1990s, produced an early magnetic tunnel junction in 1998, and created a 256Kb MRAM test chip in 1999. Motorola later obtained important Toggle MRAM intellectual property, while the first commercial MRAM products appeared in the mid-2000s. Following changes in Motorola’s semiconductor organization and the creation of Freescale Semiconductor, the MRAM business was eventually separated into the company that became Everspin Technologies. Everspin began commercializing discrete MRAM and developing manufacturing relationships intended to make magnetic memory compatible with conventional CMOS production. In 2008 it announced ball-grid-array packaging for memory densities from 256Kb through 4Mb. In 2009 it introduced a first-generation SPI MRAM family and began shipping embedded MRAM samples in cooperation with GlobalFoundries. The company expanded production during 2010 and reported its first million MRAM units sold. It also completed qualification of an early embedded MRAM offering and introduced 16Mb products. By 2011, shipments had grown to millions of standalone and embedded devices. In 2012 Everspin produced a 64Mb ST-MRAM device on a 90nm process, marking progress toward higher-density spin-transfer torque products. In 2014 Everspin and GlobalFoundries broadened their manufacturing collaboration to include in-plane and perpendicular magnetic tunnel junction ST-MRAM on 300mm wafers, using 40nm and 28nm process technologies. This relationship supported Everspin’s effort to scale density and integrate MRAM into standard semiconductor manufacturing flows. In 2016 the company announced samples of a 256Mb ST-MRAM device, while GlobalFoundries announced a 22nm embedded MRAM platform developed with Everspin. Everspin also completed an initial public offering on October 7, 2016. During 2017, Everspin extended ST-MRAM support to FPGA-related applications through DDR3 and DDR4 compatibility, including support for the memory controller environment used with Xilinx UltraScale FPGAs. The company appointed Kevin Conley as president and chief executive officer on September 1 of that year. It also launched the first version of its nvNITRO storage accelerator, using MRAM to provide persistent storage without the battery backup commonly used to protect data in flight in some storage architectures. SMART Modular Technologies became an nvNITRO technology partner and planned to market branded versions. Everspin continued scaling STT-MRAM in 2018 and 2019. It increased production of 256Mb devices, shipped early customer samples of 1Gb STT-MRAM in December 2018, began pre-production in June 2019, and expanded tools and design support for ST-DDR4 system implementations. In 2020, GlobalFoundries began using its 12nm production platform for Everspin MRAM. The company’s continuing strategy has centered on discrete MRAM products, embedded MRAM licensing and foundry services, and specialized storage solutions for applications where persistence, endurance, performance, and reliability are critical.
- 2020
12nm MRAM manufacturing platform
[1]GlobalFoundries began using a 12nm platform for Everspin MRAM production.
- 2018
1Gb STT-MRAM customer samples
[1]The company shipped initial customer samples of 1Gb STT-MRAM.
- 2017
256Mb ST-MRAM samples and nvNITRO launch
[1]Everspin announced 256Mb ST-MRAM samples, expanded FPGA compatibility, and launched the first nvNITRO storage accelerator generation.
- 2016
Initial public offering
[1]Everspin completed its initial public offering on October 7, 2016.
- 2014
300mm ST-MRAM manufacturing collaboration
[1]Everspin and GlobalFoundries expanded work on in-plane and perpendicular MTJ ST-MRAM using 40nm and 28nm processes.
- 2012
64Mb ST-MRAM produced
[1]The company produced a 64Mb ST-MRAM device using a 90nm process.
- 2009
SPI MRAM and embedded MRAM sampling
[1]Everspin released its first SPI MRAM family and began shipping embedded MRAM samples with GlobalFoundries.
- 2008
BGA MRAM packaging announced
[1]Everspin announced BGA packages supporting MRAM densities from 256Kb to 4Mb.
- 2006
First commercial MRAM product reaches the market
[1]The first commercially available MRAM product, with 4Mb density, marked a major step in the technology’s commercialization.
- 1999
Motorola develops a 256Kb MRAM test chip
[1]Motorola’s test chip helped advance MRAM from laboratory research toward product development.
Products and positioning
Specialist non-volatile memory supplier focused on high endurance, fast access, data persistence, and reliability-critical applications rather than commodity memory volume.
Discrete non-volatile memory
Toggle MRAM
Everspin’s Toggle MRAM products use magnetic tunnel junction cells to retain data without power and without the wear-out mechanism associated with conventional electrically erasable memory. The family has included parallel and SPI interfaces, densities from 128Kb to 16Mb, and DFN, SOIC, BGA, and TSOP2 packages. Its stated operating characteristics are aimed at applications requiring long retention, high endurance, and broad industrial temperature capability.
High-density non-volatile memory
Spin-Transfer Torque MRAM
STT-MRAM uses a perpendicular magnetic tunnel junction and spin-polarized current to switch the magnetic state of memory cells. Compared with Toggle MRAM, the architecture is intended to support smaller cells, higher densities, lower switching energy, and strong endurance. Everspin has developed products compatible with DDR3 and DDR4-oriented systems, allowing persistent memory behavior in applications that traditionally use DRAM while reducing or eliminating refresh-related data loss.
Persistent storage accelerator · 2017
nvNITRO Storage Accelerators
nvNITRO products apply Everspin MRAM to storage acceleration and data-in-flight protection. The product family has included half-height, half-length PCIe Gen3 x8 cards and U.2 form factors, with support for NVMe 1.1 and block-storage requirements. Because the storage medium is non-volatile MRAM, the architecture is designed to protect in-flight data without relying on the battery backup used by some alternative storage products.
Embedded memory technology · 2009
Embedded MRAM
Everspin works with foundry partners to integrate MRAM into standard CMOS process flows. Embedded MRAM can serve as a persistent alternative to embedded flash, SRAM, or DRAM within logic designs. The technology has been associated with GlobalFoundries process platforms including 65nm, 40nm, 28nm, and 22FDX, enabling customers to evaluate non-volatile memory for system-on-chip and other embedded applications.
Brand decisions
2017
Launch nvNITRO storage acceleratorsProduct launchBackground
Storage systems require protection for data in flight and may use battery-backed alternatives when volatile memory is involved.
Action taken
Everspin launched nvNITRO products based on ST-MRAM in PCIe and U.2 form factors, supporting NVMe and block-storage use cases.
Aftermath
The launch broadened Everspin’s offering beyond discrete memory chips into persistent storage infrastructure, with SMART Modular Technologies joining as a technology partner.
2017
Move STT-MRAM toward 1Gb densityGeneration changeBackground
Higher density was important for extending MRAM into memory and storage applications traditionally served by larger-capacity technologies.
Action taken
Everspin announced customer sampling of 1Gb DDR4-compatible STT-MRAM and continued development toward production-scale availability.
Aftermath
The program led to initial customer samples in 2018 and pre-production activity in 2019.
2016
Become a publicly traded companyOtherBackground
After years of MRAM development, sampling, and production expansion, Everspin pursued access to public equity markets.
Action taken
Everspin completed an initial public offering on October 7, 2016.
Aftermath
The IPO established Everspin as a public semiconductor company and supported its continued product and manufacturing development.
2014
Expand foundry collaboration for scalable STT-MRAMStrategyBackground
Everspin needed manufacturing processes capable of supporting higher-density MRAM and smaller magnetic memory cells.
Action taken
The company expanded its partnership with GlobalFoundries to produce in-plane and perpendicular MTJ STT-MRAM on 300mm wafers using 40nm and 28nm process technologies.
Aftermath
The collaboration supported subsequent embedded MRAM and higher-density STT-MRAM development.
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